SSD15N10-C 15a, 100v, r ds(on) 110m n-ch enhancement mode power mosfet elektronische bauelemente 24-oct-2018 rev. f page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. to - 252(d - pack) a c d n o p g e f h k j m b 15n10 rohs compliant product a suffix of -c specifies halogen free description the SSD15N10-C is the highest performance trenc h n-ch mosfets with extreme high cell density, which provide excellent r dson and gate charge for most of the synchronous buck converter applications. the SSD15N10-C meet the rohs and green product requirement with full function reliability approved . features advanced high cell density trench technology super low gate charge green device available marking package information package mpq leader size to-252 2.5k 13 inch order information absolute maximum ratings parameter symbol ratings unit drain-source voltage v ds 100 v gate-source voltage v gs 20 v continuous drain current,v gs @10v 1 t c =25c i d 15 a t c =100c 10.5 a pulsed drain current 3 i dm 30 a power dissipation t c =25c p d 44.6 w t a =25c 2 w operating junction and storage temperature range t j , t stg -55 ~ 150 c thermal resistance ratings maximum thermal resistance junction-ambient 1 r ja 62.5 c / w maximum thermal resistance junction-ambient 2 110 maximum thermal resistance junction-case r jc 2.8 part number type SSD15N10-C lead (pb)-free and halogen-free date code ref. millimeter ref. millimeter min. max. min. max. a 6. 3 6.9 j 2.3 ref. b 4.95 5.53 k 0.89 ref. c 2.1 2.5 m 0.45 1.14 d 0.4 0.9 n 1.55 typ. e 6 7.7 o 0 0.15 f 2.90 ref p 0.58 ref. g 5.4 6.4 h 0. 6 1.2 1 gate 3 source 2 drain
SSD15N10-C 15a, 100v, r ds(on) 110m n-ch enhancement mode power mosfet elektronische bauelemente 24-oct-2018 rev. f page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t j =25 c unless otherwise specified) parameter symbol min. typ. max. unit test conditions drain-source breakdown voltage bv dss 100 - - v v gs =0, i d =250 a gate threshold voltage v gs(th) 1.0 - 2.5 v v ds =v gs , i d =250 a gate-source leakage current i gss - - 100 na v gs = 20v drain-source leakage current i dss - - 1 a v ds =80v, v gs =0, t j =25c - - 5 v ds =80v, v gs =0, t j =55c static drain-source on-resistance 4 r ds(on) - - 110 m v gs =10v, i d =8a - - 120 v gs =4.5v, i d =6a total gate charge 2 q g - 26.2 - nc i d =10a v ds =80v v gs =10v gate-source charge q gs - 4.6 - gate-drain (miller) change q gd - 5.1 - turn-on delay time 2 t d(on) - 4.2 - ns v ds =50v i d = 10a v gs =10v r g =3.3 rise time t r - 8.2 - turn-off delay time t d(off) - 35.6 - fall time t f - 9.6 - input capacitance c iss - 1535 - pf v gs =0 v ds =15v f=1.0mhz output capacitance c oss - 60 - reverse transfer capacitance c rss - 37 - gate resistance r g - 2 - f=1.0mhz source-drain diode continuous source current 1 i s - - 15 a pulsed source current 3 , i sm - - 30 a forward on voltage 2 v sd - - 1.2 v v gs =0v , i s =8a , t j =25c reverse recovery time t rr - 37 - ns i f =10a , di/dt=100a/ s , t j =25c reverse recovery charge q rr - 27.3 - nc notes: 1. the data tested by surface mounted on a 1 inch 2 fr-4 board with 2oz copper. 2. when mounted on minimum pad of copper. 3. the power dissipation is limited by 150c juncti on temperature. 4. the data tested by pulsed, pulse width Q 300us, duty cycle Q 2%
SSD15N10-C 15a, 100v, r ds(on) 110m n-ch enhancement mode power mosfet elektronische bauelemente 24-oct-2018 rev. f page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristics curve
SSD15N10-C 15a, 100v, r ds(on) 110m n-ch enhancement mode power mosfet elektronische bauelemente 24-oct-2018 rev. f page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristics curve
|
